Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
100V
Series
STripFET II
Tip pachet
TO-263
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
115W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
40nC
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Latime
9.35mm
Inaltime
4.6mm
Lungime
10.4mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 9,65
€ 1,93 Buc. (Intr-un pachet de 5) (fara TVA)
€ 11,68
€ 2,335 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 9,65
€ 1,93 Buc. (Intr-un pachet de 5) (fara TVA)
€ 11,68
€ 2,335 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 45 | € 1,93 | € 9,65 |
| 50 - 245 | € 1,18 | € 5,90 |
| 250 - 495 | € 0,89 | € 4,45 |
| 500+ | € 0,79 | € 3,95 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
100V
Series
STripFET II
Tip pachet
TO-263
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
115W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
40nC
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Latime
9.35mm
Inaltime
4.6mm
Lungime
10.4mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.