Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-263
Series
STB
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
280mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
16.8nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Inaltime
4.37mm
Lungime
10.4mm
Standards/Approvals
No
Latime
9.35mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 1.430,00
€ 1,43 Buc. (Pe o rola de 1000) (fara TVA)
€ 1.730,30
€ 1,73 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 1.430,00
€ 1,43 Buc. (Pe o rola de 1000) (fara TVA)
€ 1.730,30
€ 1,73 Buc. (Pe o rola de 1000) (cu TVA)
Informatii despre stoc temporar indisponibile
1000
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-263
Series
STB
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
280mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
16.8nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Inaltime
4.37mm
Lungime
10.4mm
Standards/Approvals
No
Latime
9.35mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
