Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-263
Series
MDmesh M2
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
280mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
21.5nC
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Inaltime
4.6mm
Lungime
10.4mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii produs
Informatii despre stoc temporar indisponibile
€ 1.460,00
€ 1,46 Buc. (Pe o rola de 1000) (fara TVA)
€ 1.766,60
€ 1,767 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 1.460,00
€ 1,46 Buc. (Pe o rola de 1000) (fara TVA)
€ 1.766,60
€ 1,767 Buc. (Pe o rola de 1000) (cu TVA)
Informatii despre stoc temporar indisponibile
1000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-263
Series
MDmesh M2
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
280mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
21.5nC
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Inaltime
4.6mm
Lungime
10.4mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii produs