Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Tip pachet
TO-263
Series
STripFET F7
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
175°C
Inaltime
4.6mm
Standards/Approvals
No
Lungime
10.4mm
Automotive Standard
No
Detalii produs
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 9,45
€ 1,89 Buc. (Intr-un pachet de 5) (fara TVA)
€ 11,43
€ 2,287 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 9,45
€ 1,89 Buc. (Intr-un pachet de 5) (fara TVA)
€ 11,43
€ 2,287 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Tip pachet
TO-263
Series
STripFET F7
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
175°C
Inaltime
4.6mm
Standards/Approvals
No
Lungime
10.4mm
Automotive Standard
No
Detalii produs
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
