Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Operating Frequency
230 MHz
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
125V
Output Power
150W
Tip pachet
M174
Series
SD2931
Montare
Surface
Numar pini
4
Channel Mode
Enhancement
Temperatura minima de lucru
65°C
Temperatura maxima de lucru
200°C
Transistor Configuration
Single
Latime
24.89 mm
Inaltime
4.11mm
Lungime
26.67mm
Standards/Approvals
No
Typical Power Gain
14dB
Automotive Standard
No
Tara de origine
Morocco
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 400,20
€ 80,04 Each (Supplied in a Tray) (fara TVA)
€ 484,24
€ 96,85 Each (Supplied in a Tray) (cu TVA)
Impachetare pentru productie (Tava)
5
€ 400,20
€ 80,04 Each (Supplied in a Tray) (fara TVA)
€ 484,24
€ 96,85 Each (Supplied in a Tray) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tava)
5
| Cantitate | Pret unitar |
|---|---|
| 5 - 9 | € 80,04 |
| 10+ | € 76,84 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Operating Frequency
230 MHz
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
125V
Output Power
150W
Tip pachet
M174
Series
SD2931
Montare
Surface
Numar pini
4
Channel Mode
Enhancement
Temperatura minima de lucru
65°C
Temperatura maxima de lucru
200°C
Transistor Configuration
Single
Latime
24.89 mm
Inaltime
4.11mm
Lungime
26.67mm
Standards/Approvals
No
Typical Power Gain
14dB
Automotive Standard
No
Tara de origine
Morocco
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.


