Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Hip-247
Series
SCT
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
3V
Typical Gate Charge Qg @ Vgs
94nC
Maximum Power Dissipation Pd
389W
Temperatura maxima de lucru
200°C
Lungime
34.8mm
Inaltime
5mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 770,10
€ 25,67 Each (In a Tube of 30) (fara TVA)
€ 931,82
€ 31,061 Each (In a Tube of 30) (cu TVA)
30
€ 770,10
€ 25,67 Each (In a Tube of 30) (fara TVA)
€ 931,82
€ 31,061 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Hip-247
Series
SCT
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
3V
Typical Gate Charge Qg @ Vgs
94nC
Maximum Power Dissipation Pd
389W
Temperatura maxima de lucru
200°C
Lungime
34.8mm
Inaltime
5mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
