Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Tip pachet
Hip-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.4V
Maximum Power Dissipation Pd
290W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
63nC
Temperatura maxima de lucru
200°C
Lungime
15.75mm
Standards/Approvals
No
Latime
5.15mm
Inaltime
34.95mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Informatii despre stoc temporar indisponibile
€ 17,06
€ 17,06 Buc. (fara TVA)
€ 20,64
€ 20,64 Buc. (cu TVA)
Standard
1
€ 17,06
€ 17,06 Buc. (fara TVA)
€ 20,64
€ 20,64 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Tip pachet
Hip-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.4V
Maximum Power Dissipation Pd
290W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
63nC
Temperatura maxima de lucru
200°C
Lungime
15.75mm
Standards/Approvals
No
Latime
5.15mm
Inaltime
34.95mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.