Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Hip-247
Series
SCTW40N
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
700mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
278W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Temperatura maxima de lucru
175°C
Inaltime
20.15mm
Lungime
15.75mm
Standards/Approvals
No
Latime
5.15mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 472,80
€ 15,76 Each (In a Tube of 30) (fara TVA)
€ 572,09
€ 19,07 Each (In a Tube of 30) (cu TVA)
30
€ 472,80
€ 15,76 Each (In a Tube of 30) (fara TVA)
€ 572,09
€ 19,07 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Hip-247
Series
SCTW40N
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
700mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
278W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Temperatura maxima de lucru
175°C
Inaltime
20.15mm
Lungime
15.75mm
Standards/Approvals
No
Latime
5.15mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
