Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Tip pachet
PowerFLAT
Series
SCTL35N65G2V
Montare
Surface
Numar pini
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
417W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
73nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Temperatura maxima de lucru
175°C
Inaltime
0.95mm
Lungime
8.1mm
Standards/Approvals
No
Latime
8.1mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 43.560,00
€ 14,52 Buc. (Pe o rola de 3000) (fara TVA)
€ 52.707,60
€ 17,569 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 43.560,00
€ 14,52 Buc. (Pe o rola de 3000) (fara TVA)
€ 52.707,60
€ 17,569 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Tip pachet
PowerFLAT
Series
SCTL35N65G2V
Montare
Surface
Numar pini
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
417W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
73nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.3V
Temperatura maxima de lucru
175°C
Inaltime
0.95mm
Lungime
8.1mm
Standards/Approvals
No
Latime
8.1mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
