Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Tip pachet
H2PAK
Series
SCTH90
Montare
Surface
Numar pini
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Gate Source Voltage Vgs
22V
Temperatura maxima de lucru
175°C
Inaltime
10.4mm
Lungime
15.25mm
Standards/Approvals
No
Latime
4.8mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 26.400,00
€ 26,40 Buc. (Pe o rola de 1000) (fara TVA)
€ 31.944,00
€ 31,944 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 26.400,00
€ 26,40 Buc. (Pe o rola de 1000) (fara TVA)
€ 31.944,00
€ 31,944 Buc. (Pe o rola de 1000) (cu TVA)
Informatii despre stoc temporar indisponibile
1000
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Tip pachet
H2PAK
Series
SCTH90
Montare
Surface
Numar pini
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Gate Source Voltage Vgs
22V
Temperatura maxima de lucru
175°C
Inaltime
10.4mm
Lungime
15.25mm
Standards/Approvals
No
Latime
4.8mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
