Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
H2PAK-7
Series
SCT
Montare
Surface
Numar pini
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Detalii Produs
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Informatii despre stoc temporar indisponibile
P.O.A.
Buc. (Pe o rola de 1000) (fara TVA)
1000
P.O.A.
Buc. (Pe o rola de 1000) (fara TVA)
Informatii despre stoc temporar indisponibile
1000
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
H2PAK-7
Series
SCT
Montare
Surface
Numar pini
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Detalii Produs
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.