STMicroelectronics SiC MOSFET N-Channel MOSFET, 20 A, 1.2 kV Enhancement, 3-Pin H2PAK-2 SCT20N120H

Marca

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1.2kV

Series

SiC MOSFET

Tip pachet

H2PAK-2

Montare

Surface

Numar pini

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25V

Maximum Power Dissipation Pd

150W

Temperatura minima de lucru

-55°C

Typical Gate Charge Qg @ Vgs

45nC

Temperatura maxima de lucru

175°C

Standards/Approvals

No

Latime

4.7mm

Inaltime

10.4mm

Lungime

15.8mm

Automotive Standard

No