Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Hip-247
Series
SCT
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
153W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
3.6V
Temperatura maxima de lucru
200°C
Lungime
10.4mm
Inaltime
15.8mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Informatii despre stoc temporar indisponibile
€ 418,64
€ 418,64 1 Tube of 30 (fara TVA)
€ 506,55
€ 506,55 1 Tube of 30 (cu TVA)
1
€ 418,64
€ 418,64 1 Tube of 30 (fara TVA)
€ 506,55
€ 506,55 1 Tube of 30 (cu TVA)
Informatii despre stoc temporar indisponibile
1
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Hip-247
Series
SCT
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
153W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
3.6V
Temperatura maxima de lucru
200°C
Lungime
10.4mm
Inaltime
15.8mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.