Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Hip-247
Series
SCT
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
153W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.6V
Temperatura maxima de lucru
200°C
Inaltime
15.8mm
Lungime
10.4mm
Standards/Approvals
No
Latime
4.7mm
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Informatii despre stoc temporar indisponibile
€ 419,49
€ 419,49 1 Tube of 30 (fara TVA)
€ 507,58
€ 507,58 1 Tube of 30 (cu TVA)
1
€ 419,49
€ 419,49 1 Tube of 30 (fara TVA)
€ 507,58
€ 507,58 1 Tube of 30 (cu TVA)
Informatii despre stoc temporar indisponibile
1
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Hip-247
Series
SCT
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
153W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.6V
Temperatura maxima de lucru
200°C
Inaltime
15.8mm
Lungime
10.4mm
Standards/Approvals
No
Latime
4.7mm
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.