Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Hip-247
Series
SCT
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
150W
Temperatura minima de lucru
-55°C
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
4.3V
Temperatura maxima de lucru
200°C
Inaltime
34.95mm
Lungime
15.75mm
Standards/Approvals
No
Latime
5.15mm
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Informatii despre stoc temporar indisponibile
P.O.A.
Standard
1
P.O.A.
Informatii despre stoc temporar indisponibile
Standard
1
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Hip-247
Series
SCT
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
150W
Temperatura minima de lucru
-55°C
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
4.3V
Temperatura maxima de lucru
200°C
Inaltime
34.95mm
Lungime
15.75mm
Standards/Approvals
No
Latime
5.15mm
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.