STMicroelectronics STPOWER Gen3 SiC MOSFET Type N-Channel, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

Marca

Channel Type

Type N

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Tip pachet

Hip-247-4

Series

STPOWER Gen3 SiC MOSFET

Montare

Through Hole

Numar pini

4

Maximum Drain Source Resistance Rds

37mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

389W

Temperatura minima de lucru

-55°C

Temperatura maxima de lucru

200°C

Lungime

35.9mm

Inaltime

5.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Tara de origine

China