Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Dual N
Maximum Drain Source Voltage Vds
95V
Tip pachet
LBB
Montare
Surface
Numar pini
5
Maximum Drain Source Resistance Rds
1Ω
Temperatura minima de lucru
-55°C
Maximum Gate Source Voltage Vgs
10V
Temperatura maxima de lucru
150°C
Lungime
28.95mm
Inaltime
2.1mm
Standards/Approvals
2002/95/EC
Latime
5.85mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.
Informatii despre stoc temporar indisponibile
€ 196,42
€ 196,42 Buc. (fara TVA)
€ 237,67
€ 237,67 Buc. (cu TVA)
Standard
1
€ 196,42
€ 196,42 Buc. (fara TVA)
€ 237,67
€ 237,67 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Dual N
Maximum Drain Source Voltage Vds
95V
Tip pachet
LBB
Montare
Surface
Numar pini
5
Maximum Drain Source Resistance Rds
1Ω
Temperatura minima de lucru
-55°C
Maximum Gate Source Voltage Vgs
10V
Temperatura maxima de lucru
150°C
Lungime
28.95mm
Inaltime
2.1mm
Standards/Approvals
2002/95/EC
Latime
5.85mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.