Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Dual N
Maximum Drain Source Voltage Vds
95V
Tip pachet
LBB
Montare
Surface
Numar pini
5
Maximum Drain Source Resistance Rds
1Ω
Temperatura minima de lucru
-55°C
Maximum Gate Source Voltage Vgs
10V
Temperatura maxima de lucru
150°C
Lungime
28.95mm
Inaltime
2.1mm
Standards/Approvals
2002/95/EC
Latime
5.85mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.
Informatii despre stoc temporar indisponibile
€ 19.601,00
€ 196,01 Buc. (Pe o rola de 100) (fara TVA)
€ 23.717,21
€ 237,172 Buc. (Pe o rola de 100) (cu TVA)
100
€ 19.601,00
€ 196,01 Buc. (Pe o rola de 100) (fara TVA)
€ 23.717,21
€ 237,172 Buc. (Pe o rola de 100) (cu TVA)
Informatii despre stoc temporar indisponibile
100
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Dual N
Maximum Drain Source Voltage Vds
95V
Tip pachet
LBB
Montare
Surface
Numar pini
5
Maximum Drain Source Resistance Rds
1Ω
Temperatura minima de lucru
-55°C
Maximum Gate Source Voltage Vgs
10V
Temperatura maxima de lucru
150°C
Lungime
28.95mm
Inaltime
2.1mm
Standards/Approvals
2002/95/EC
Latime
5.85mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.