Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
65V
Series
PD5
Tip pachet
PowerSO-10RF
Montare
Surface
Numar pini
10
Maximum Drain Source Resistance Rds
0.76Ω
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
79W
Temperatura minima de lucru
65°C
Temperatura maxima de lucru
165°C
Standards/Approvals
ECOPACK, JEDEC-approved, J-STD-020B, RoHS
Latime
9.6mm
Lungime
14.35mm
Inaltime
3.6mm
Automotive Standard
No
Tara de origine
Malaysia
Detalii Produs
The STMicroelectronics RF power transistor is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Devices superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 69,20
€ 69,20 Buc. (fara TVA)
€ 83,73
€ 83,73 Buc. (cu TVA)
1
€ 69,20
€ 69,20 Buc. (fara TVA)
€ 83,73
€ 83,73 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
1
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
65V
Series
PD5
Tip pachet
PowerSO-10RF
Montare
Surface
Numar pini
10
Maximum Drain Source Resistance Rds
0.76Ω
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
79W
Temperatura minima de lucru
65°C
Temperatura maxima de lucru
165°C
Standards/Approvals
ECOPACK, JEDEC-approved, J-STD-020B, RoHS
Latime
9.6mm
Lungime
14.35mm
Inaltime
3.6mm
Automotive Standard
No
Tara de origine
Malaysia
Detalii Produs
The STMicroelectronics RF power transistor is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Devices superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
