Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
40V
Tip pachet
PowerSO-10RF
Series
PD5
Montare
Surface
Numar pini
10
Maximum Drain Source Resistance Rds
0.75Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
73W
Temperatura minima de lucru
65°C
Maximum Gate Source Voltage Vgs
20V
Temperatura maxima de lucru
165°C
Lungime
15.65mm
Inaltime
3.6mm
Standards/Approvals
ECOPACK, JEDEC-approved, J-STD-020B, RoHS
Latime
9.6mm
Automotive Standard
No
Tara de origine
Malaysia
Detalii Produs
The STMicroelectronics are common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, linearity and reliability thanks to STs latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF.
Informatii despre stoc temporar indisponibile
€ 21,18
€ 21,18 Buc. (fara TVA)
€ 25,63
€ 25,63 Buc. (cu TVA)
1
€ 21,18
€ 21,18 Buc. (fara TVA)
€ 25,63
€ 25,63 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
1
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
40V
Tip pachet
PowerSO-10RF
Series
PD5
Montare
Surface
Numar pini
10
Maximum Drain Source Resistance Rds
0.75Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
73W
Temperatura minima de lucru
65°C
Maximum Gate Source Voltage Vgs
20V
Temperatura maxima de lucru
165°C
Lungime
15.65mm
Inaltime
3.6mm
Standards/Approvals
ECOPACK, JEDEC-approved, J-STD-020B, RoHS
Latime
9.6mm
Automotive Standard
No
Tara de origine
Malaysia
Detalii Produs
The STMicroelectronics are common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, linearity and reliability thanks to STs latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF.