Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P, Type N
Maximum Continuous Drain Current Id
6.5A
Maximum Drain Source Voltage Vds
650V
Tip pachet
QFN-9
Series
MASTERG
Montare
Surface
Numar pini
31
Maximum Drain Source Resistance Rds
300mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
1.5nC
Maximum Power Dissipation Pd
40mW
Temperatura minima de lucru
-40°C
Temperatura maxima de lucru
125°C
Lungime
9mm
Inaltime
1mm
Standards/Approvals
RoHS, ECOPACK
Automotive Standard
No
Tara de origine
Thailand
Detalii Produs
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
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1
€ 5,23
€ 5,23 Buc. (fara TVA)
€ 6,33
€ 6,33 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
1
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P, Type N
Maximum Continuous Drain Current Id
6.5A
Maximum Drain Source Voltage Vds
650V
Tip pachet
QFN-9
Series
MASTERG
Montare
Surface
Numar pini
31
Maximum Drain Source Resistance Rds
300mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
1.5nC
Maximum Power Dissipation Pd
40mW
Temperatura minima de lucru
-40°C
Temperatura maxima de lucru
125°C
Lungime
9mm
Inaltime
1mm
Standards/Approvals
RoHS, ECOPACK
Automotive Standard
No
Tara de origine
Thailand
Detalii Produs
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
