Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P, Type N
Maximum Continuous Drain Current Id
6.5A
Maximum Drain Source Voltage Vds
650V
Tip pachet
QFN-9
Series
MASTERG
Montare
Surface
Numar pini
31
Maximum Drain Source Resistance Rds
300mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
1.5nC
Maximum Power Dissipation Pd
40mW
Temperatura minima de lucru
-40°C
Temperatura maxima de lucru
125°C
Lungime
9mm
Inaltime
1mm
Standards/Approvals
RoHS, ECOPACK
Automotive Standard
No
Tara de origine
Thailand
Detalii Produs
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Informatii despre stoc temporar indisponibile
€ 15.720,00
€ 5,24 Buc. (Pe o rola de 3000) (fara TVA)
€ 19.021,20
€ 6,34 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 15.720,00
€ 5,24 Buc. (Pe o rola de 3000) (fara TVA)
€ 19.021,20
€ 6,34 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P, Type N
Maximum Continuous Drain Current Id
6.5A
Maximum Drain Source Voltage Vds
650V
Tip pachet
QFN-9
Series
MASTERG
Montare
Surface
Numar pini
31
Maximum Drain Source Resistance Rds
300mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
1.5nC
Maximum Power Dissipation Pd
40mW
Temperatura minima de lucru
-40°C
Temperatura maxima de lucru
125°C
Lungime
9mm
Inaltime
1mm
Standards/Approvals
RoHS, ECOPACK
Automotive Standard
No
Tara de origine
Thailand
Detalii Produs
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.