Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
ACEPACK 2
Series
A2U
Montare
Chassis
Numar pini
8
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
298nC
Temperatura minima de lucru
-40°C
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
2.9V
Temperatura maxima de lucru
175°C
Transistor Configuration
3 Phase
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 4.504,32
€ 250,24 Each (In a Tray of 18) (fara TVA)
€ 5.450,23
€ 302,79 Each (In a Tray of 18) (cu TVA)
18
€ 4.504,32
€ 250,24 Each (In a Tray of 18) (fara TVA)
€ 5.450,23
€ 302,79 Each (In a Tray of 18) (cu TVA)
Informatii despre stoc temporar indisponibile
18
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
ACEPACK 2
Series
A2U
Montare
Chassis
Numar pini
8
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
298nC
Temperatura minima de lucru
-40°C
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
2.9V
Temperatura maxima de lucru
175°C
Transistor Configuration
3 Phase
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
