Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
MicrochipProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
236A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Module
Series
MSCSMC
Montare
Direct
Numar pini
33
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
604W
Temperatura minima de lucru
-40°C
Typical Gate Charge Qg @ Vgs
726nC
Maximum Gate Source Voltage Vgs
21V
Forward Voltage Vf
4.7V
Temperatura maxima de lucru
175°C
Inaltime
16.4mm
Lungime
56.7mm
Latime
62.8mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The Microchip Advanced silicon carbide power module delivers exceptional performance in high-efficiency applications, particularly in demanding environments requiring robust power management and thermal capabilities.
Informatii despre stoc temporar indisponibile
€ 130,50
€ 130,50 Buc. (fara TVA)
€ 157,90
€ 157,90 Buc. (cu TVA)
1
€ 130,50
€ 130,50 Buc. (fara TVA)
€ 157,90
€ 157,90 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
1
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
MicrochipProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
236A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Module
Series
MSCSMC
Montare
Direct
Numar pini
33
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
604W
Temperatura minima de lucru
-40°C
Typical Gate Charge Qg @ Vgs
726nC
Maximum Gate Source Voltage Vgs
21V
Forward Voltage Vf
4.7V
Temperatura maxima de lucru
175°C
Inaltime
16.4mm
Lungime
56.7mm
Latime
62.8mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The Microchip Advanced silicon carbide power module delivers exceptional performance in high-efficiency applications, particularly in demanding environments requiring robust power management and thermal capabilities.