Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
295A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Montare
Heatsink
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
1918W
Temperatura minima de lucru
-40°C
Temperatura maxima de lucru
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Detalii Produs
The Microchip silicon carbide power module combines dual common source functionality with high voltage capabilities, designed for efficient operation and superior performance in demanding applications.
Informatii despre stoc temporar indisponibile
€ 979,12
€ 979,12 Buc. (fara TVA)
€ 1.184,74
€ 1.184,74 Buc. (cu TVA)
1
€ 979,12
€ 979,12 Buc. (fara TVA)
€ 1.184,74
€ 1.184,74 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
1
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
295A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Montare
Heatsink
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
1918W
Temperatura minima de lucru
-40°C
Temperatura maxima de lucru
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Detalii Produs
The Microchip silicon carbide power module combines dual common source functionality with high voltage capabilities, designed for efficient operation and superior performance in demanding applications.