Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
151A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Montare
Heatsink
Channel Mode
Enhancement Mode
Temperatura minima de lucru
-40°C
Maximum Power Dissipation Pd
1013W
Temperatura maxima de lucru
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Detalii Produs
The Microchip silicon carbide power module offers a phase leg configuration to effectively control high-voltage power applications through superior efficiency and reliability.
Informatii despre stoc temporar indisponibile
€ 502,60
€ 502,60 Buc. (fara TVA)
€ 608,15
€ 608,15 Buc. (cu TVA)
1
€ 502,60
€ 502,60 Buc. (fara TVA)
€ 608,15
€ 608,15 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
1
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
151A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Montare
Heatsink
Channel Mode
Enhancement Mode
Temperatura minima de lucru
-40°C
Maximum Power Dissipation Pd
1013W
Temperatura maxima de lucru
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Detalii Produs
The Microchip silicon carbide power module offers a phase leg configuration to effectively control high-voltage power applications through superior efficiency and reliability.