STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK

Marca

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Tip pachet

H2PAK

Series

DeepGate, STripFET

Montare

Surface

Numar pini

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Frecventa minima de auto-rezonanta

-55°C

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Temperatura maxima de lucru

175°C

Inaltime

4.8mm

Lungime

10.4mm

Standards/Approvals

No

Automotive Standard

No