Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
78mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
210W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
82nC
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Inaltime
20.15mm
Lungime
15.75mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Informatii despre stoc temporar indisponibile
€ 7,40
€ 7,40 Buc. (fara TVA)
€ 8,95
€ 8,95 Buc. (cu TVA)
Standard
1
€ 7,40
€ 7,40 Buc. (fara TVA)
€ 8,95
€ 8,95 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
| Cantitate | Pret unitar |
|---|---|
| 1 - 9 | € 7,40 |
| 10+ | € 5,34 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
78mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
210W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
82nC
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Inaltime
20.15mm
Lungime
15.75mm
Automotive Standard
No
Tara de origine
China
Detalii Produs
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.