Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
68A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-247
Series
ST
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
0.036Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
125nC
Maximum Power Dissipation Pd
450W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Lungime
15.9mm
Inaltime
41.2mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 281,10
€ 9,37 Each (In a Tube of 30) (fara TVA)
€ 340,13
€ 11,338 Each (In a Tube of 30) (cu TVA)
30
€ 281,10
€ 9,37 Each (In a Tube of 30) (fara TVA)
€ 340,13
€ 11,338 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
68A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-247
Series
ST
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
0.036Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
125nC
Maximum Power Dissipation Pd
450W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Lungime
15.9mm
Inaltime
41.2mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
