Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
950V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
13nC
Maximum Power Dissipation Pd
90W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Lungime
10.4mm
Inaltime
15.75mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 65,50
€ 1,31 Each (In a Tube of 50) (fara TVA)
€ 79,26
€ 1,585 Each (In a Tube of 50) (cu TVA)
50
€ 65,50
€ 1,31 Each (In a Tube of 50) (fara TVA)
€ 79,26
€ 1,585 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
950V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
13nC
Maximum Power Dissipation Pd
90W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Lungime
10.4mm
Inaltime
15.75mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
