Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SOT-223
Series
STN3N
Montare
Surface
Numar pini
4
Maximum Drain Source Resistance Rds
7mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
10nC
Maximum Power Dissipation Pd
3.3W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.3V
Temperatura maxima de lucru
150°C
Lungime
6.5mm
Inaltime
1.6mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics Power MOSFET is the latest development of STMicroelectronics unique \"Single Feature Size™\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Informatii despre stoc temporar indisponibile
€ 920,00
€ 0,23 Buc. (Pe o rola de 4000) (fara TVA)
€ 1.113,20
€ 0,278 Buc. (Pe o rola de 4000) (cu TVA)
4000
€ 920,00
€ 0,23 Buc. (Pe o rola de 4000) (fara TVA)
€ 1.113,20
€ 0,278 Buc. (Pe o rola de 4000) (cu TVA)
Informatii despre stoc temporar indisponibile
4000
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SOT-223
Series
STN3N
Montare
Surface
Numar pini
4
Maximum Drain Source Resistance Rds
7mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
10nC
Maximum Power Dissipation Pd
3.3W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.3V
Temperatura maxima de lucru
150°C
Lungime
6.5mm
Inaltime
1.6mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics Power MOSFET is the latest development of STMicroelectronics unique \"Single Feature Size™\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.