Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Tip pachet
I2PAK
Series
STI28
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
150mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
36nC
Maximum Power Dissipation Pd
170W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Lungime
10.4mm
Inaltime
9.3mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
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ÎNSCRIE-TE GRATIS
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Informatii despre stoc temporar indisponibile
€ 110,50
€ 2,21 Each (In a Tube of 50) (fara TVA)
€ 133,70
€ 2,674 Each (In a Tube of 50) (cu TVA)
50
€ 110,50
€ 2,21 Each (In a Tube of 50) (fara TVA)
€ 133,70
€ 2,674 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Tip pachet
I2PAK
Series
STI28
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
150mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
36nC
Maximum Power Dissipation Pd
170W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Lungime
10.4mm
Inaltime
9.3mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
