Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-263
Series
STB37N60
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
94mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
54nC
Maximum Power Dissipation Pd
210W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Lungime
15.85mm
Inaltime
4.6mm
Standards/Approvals
AEC-Q101
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 4.580,00
€ 4,58 Buc. (Pe o rola de 1000) (fara TVA)
€ 5.541,80
€ 5,542 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 4.580,00
€ 4,58 Buc. (Pe o rola de 1000) (fara TVA)
€ 5.541,80
€ 5,542 Buc. (Pe o rola de 1000) (cu TVA)
Informatii despre stoc temporar indisponibile
1000
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-263
Series
STB37N60
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
94mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
54nC
Maximum Power Dissipation Pd
210W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Lungime
15.85mm
Inaltime
4.6mm
Standards/Approvals
AEC-Q101
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
