Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Tip pachet
PowerFLAT
Series
SCTL35N65G2V
Montare
Surface
Numar pini
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
3.3V
Temperatura maxima de lucru
175°C
Lungime
8.1mm
Inaltime
0.95mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 43.560,00
€ 14,52 Buc. (Pe o rola de 3000) (fara TVA)
€ 52.707,60
€ 17,569 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 43.560,00
€ 14,52 Buc. (Pe o rola de 3000) (fara TVA)
€ 52.707,60
€ 17,569 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Tip pachet
PowerFLAT
Series
SCTL35N65G2V
Montare
Surface
Numar pini
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
3.3V
Temperatura maxima de lucru
175°C
Lungime
8.1mm
Inaltime
0.95mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
