Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Hip-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
105nC
Maximum Power Dissipation Pd
270W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
3.5V
Temperatura maxima de lucru
200°C
Lungime
15.75mm
Inaltime
20.15mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.
Informatii despre stoc temporar indisponibile
€ 18,92
€ 18,92 Each (Supplied in a Tube) (fara TVA)
€ 22,89
€ 22,89 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
1
€ 18,92
€ 18,92 Each (Supplied in a Tube) (fara TVA)
€ 22,89
€ 22,89 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
1
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
Hip-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
105nC
Maximum Power Dissipation Pd
270W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
3.5V
Temperatura maxima de lucru
200°C
Lungime
15.75mm
Inaltime
20.15mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.