Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
ACEPACK 2
Series
A2F
Montare
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-40°C
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
Informatii despre stoc temporar indisponibile
€ 4.481,82
€ 248,99 Each (In a Tray of 18) (fara TVA)
€ 5.423,00
€ 301,278 Each (In a Tray of 18) (cu TVA)
18
€ 4.481,82
€ 248,99 Each (In a Tray of 18) (fara TVA)
€ 5.423,00
€ 301,278 Each (In a Tray of 18) (cu TVA)
Informatii despre stoc temporar indisponibile
18
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
ACEPACK 2
Series
A2F
Montare
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-40°C
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Detalii Produs
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.