Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SO-8
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Typical Gate Charge Qg @ Vgs
25nC
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
150°C
Lungime
5mm
Inaltime
1.65mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Informatii despre stoc temporar indisponibile
€ 1.500,00
€ 0,60 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.815,00
€ 0,726 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 1.500,00
€ 0,60 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.815,00
€ 0,726 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7.5A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SO-8
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.5W
Typical Gate Charge Qg @ Vgs
25nC
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
150°C
Lungime
5mm
Inaltime
1.65mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.