Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
680mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
85W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Lungime
6.6mm
Inaltime
2.17mm
Automotive Standard
No
Detalii Produs
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 2.200,00
€ 0,88 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.662,00
€ 1,065 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 2.200,00
€ 0,88 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.662,00
€ 1,065 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
680mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
85W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Lungime
6.6mm
Inaltime
2.17mm
Automotive Standard
No
Detalii Produs
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
