Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
420mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
16.5nC
Maximum Power Dissipation Pd
110W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Lungime
6.6mm
Inaltime
2.17mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 2.275,00
€ 0,91 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.752,75
€ 1,101 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 2.275,00
€ 0,91 Buc. (Pe o rola de 2500) (fara TVA)
€ 2.752,75
€ 1,101 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
650V
Tip pachet
TO-252
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
420mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
16.5nC
Maximum Power Dissipation Pd
110W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Lungime
6.6mm
Inaltime
2.17mm
Standards/Approvals
No
Automotive Standard
No
Detalii Produs
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
