Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SOT-223
Series
STripFET
Montare
Surface
Numar pini
4
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.6W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Forward Voltage Vf
-1.1V
Temperatura maxima de lucru
175°C
Inaltime
1.8mm
Lungime
6.7mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 6,60
€ 0,66 Buc. (Intr-un pachet de 10) (fara TVA)
€ 7,99
€ 0,799 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 6,60
€ 0,66 Buc. (Intr-un pachet de 10) (fara TVA)
€ 7,99
€ 0,799 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 10 - 90 | € 0,66 | € 6,60 |
| 100 - 490 | € 0,43 | € 4,30 |
| 500+ | € 0,38 | € 3,80 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SOT-223
Series
STripFET
Montare
Surface
Numar pini
4
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.6W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Forward Voltage Vf
-1.1V
Temperatura maxima de lucru
175°C
Inaltime
1.8mm
Lungime
6.7mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.