Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
65V
Tip pachet
B4E
Series
RF2L
Montare
Surface
Numar pini
4
Channel Mode
Enhancement
Temperatura maxima de lucru
200°C
Transistor Configuration
Single
Lungime
27.94mm
Inaltime
9.4mm
Standards/Approvals
RoHS
Typical Power Gain
14dB
Automotive Standard
No
Detalii Produs
The STMicroelectronics RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external matching network.
Informatii despre stoc temporar indisponibile
P.O.A.
Standard
1
P.O.A.
Informatii despre stoc temporar indisponibile
Standard
1
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
65V
Tip pachet
B4E
Series
RF2L
Montare
Surface
Numar pini
4
Channel Mode
Enhancement
Temperatura maxima de lucru
200°C
Transistor Configuration
Single
Lungime
27.94mm
Inaltime
9.4mm
Standards/Approvals
RoHS
Typical Power Gain
14dB
Automotive Standard
No
Detalii Produs
The STMicroelectronics RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external matching network.