Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
65V
Tip pachet
B4E
Series
RF2L
Montare
Surface
Numar pini
4
Channel Mode
Enhancement
Temperatura maxima de lucru
200°C
Transistor Configuration
Single
Lungime
27.94mm
Inaltime
9.4mm
Standards/Approvals
RoHS
Typical Power Gain
14dB
Automotive Standard
No
Detalii Produs
The STMicroelectronics RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external matching network.
Informatii despre stoc temporar indisponibile
P.O.A.
Buc. (Pe o rola de 120) (fara TVA)
120
P.O.A.
Buc. (Pe o rola de 120) (fara TVA)
Informatii despre stoc temporar indisponibile
120
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Drain Source Voltage Vds
65V
Tip pachet
B4E
Series
RF2L
Montare
Surface
Numar pini
4
Channel Mode
Enhancement
Temperatura maxima de lucru
200°C
Transistor Configuration
Single
Lungime
27.94mm
Inaltime
9.4mm
Standards/Approvals
RoHS
Typical Power Gain
14dB
Automotive Standard
No
Detalii Produs
The STMicroelectronics RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external matching network.