Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Tip pachet
TO-252
Montare
Surface
Channel Type
Type N
Numar pini
3
Frecventa minima de auto-rezonanta
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Temperatura maxima de lucru
175°C
Inaltime
2.4mm
Standards/Approvals
RoHS
Lungime
6.6mm
Series
H
Automotive Standard
No
Energy Rating
221mJ
Tara de origine
China
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informatii despre stoc temporar indisponibile
€ 48,00
€ 0,48 Buc. (Livrat pe rola) (fara TVA)
€ 58,08
€ 0,581 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 48,00
€ 0,48 Buc. (Livrat pe rola) (fara TVA)
€ 58,08
€ 0,581 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
100
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Tip pachet
TO-252
Montare
Surface
Channel Type
Type N
Numar pini
3
Frecventa minima de auto-rezonanta
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Temperatura maxima de lucru
175°C
Inaltime
2.4mm
Standards/Approvals
RoHS
Lungime
6.6mm
Series
H
Automotive Standard
No
Energy Rating
221mJ
Tara de origine
China
Detalii Produs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
