Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-263
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
160 nC @ 10 V
Latime
9.65mm
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Number of Elements per Chip
1
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Tara de origine
Taiwan, Province Of China
P.O.A.
Buc. (Pe o rola de 800) (fara TVA)
800
P.O.A.
Buc. (Pe o rola de 800) (fara TVA)
800
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Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-263
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
160 nC @ 10 V
Latime
9.65mm
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Number of Elements per Chip
1
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Tara de origine
Taiwan, Province Of China