Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
7.8 W
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
45.6 nC @ 10 V
Latime
4mm
Number of Elements per Chip
1
Inaltime
1.5mm
Serie
ThunderFET
Temperatura minima de lucru
-55 °C
Tara de origine
Taiwan, Province Of China
P.O.A.
Buc. (Pe o rola de 2500) (fara TVA)
2500
P.O.A.
Buc. (Pe o rola de 2500) (fara TVA)
2500
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Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
7.8 W
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
45.6 nC @ 10 V
Latime
4mm
Number of Elements per Chip
1
Inaltime
1.5mm
Serie
ThunderFET
Temperatura minima de lucru
-55 °C
Tara de origine
Taiwan, Province Of China