Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
760 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Latime
3.7mm
Number of Elements per Chip
1
Lungime
6.7mm
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Inaltime
1.8mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 63,00
€ 0,63 Buc. (Livrat pe rola) (fara TVA)
€ 76,23
€ 0,762 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 63,00
€ 0,63 Buc. (Livrat pe rola) (fara TVA)
€ 76,23
€ 0,762 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
100
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 100 - 240 | € 0,63 | € 6,30 |
| 250 - 490 | € 0,59 | € 5,90 |
| 500 - 990 | € 0,55 | € 5,50 |
| 1000+ | € 0,45 | € 4,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
760 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Latime
3.7mm
Number of Elements per Chip
1
Lungime
6.7mm
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Inaltime
1.8mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


