Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3+Tab
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Temperatura maxima de lucru
+150 °C
Lungime
6.7mm
Latime
3.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.45mm
P.O.A.
Impachetare pentru productie (Punga)
1
P.O.A.
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Punga)
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3+Tab
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Temperatura maxima de lucru
+150 °C
Lungime
6.7mm
Latime
3.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.45mm


