Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
6.6 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
520 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
52 nC @ 10 V
Transistor Material
Si
Inaltime
9.8mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 30,40
€ 3,04 Each (Supplied as a Tape) (fara TVA)
€ 36,78
€ 3,68 Each (Supplied as a Tape) (cu TVA)
Impachetare pentru productie (Banda)
10
€ 30,40
€ 3,04 Each (Supplied as a Tape) (fara TVA)
€ 36,78
€ 3,68 Each (Supplied as a Tape) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Banda)
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 10 - 49 | € 3,04 |
| 50 - 99 | € 2,88 |
| 100 - 249 | € 2,68 |
| 250+ | € 2,45 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
6.6 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
520 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
52 nC @ 10 V
Transistor Material
Si
Inaltime
9.8mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


