Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220SIS
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Latime
4.5mm
Temperatura maxima de lucru
+150 °C
Lungime
10mm
Inaltime
8.1mm
Frecventa minima de auto-rezonanta
-55 °C
P.O.A.
Each (Supplied in a Tube) (fara TVA)
Impachetare pentru productie (Tub)
5
P.O.A.
Each (Supplied in a Tube) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220SIS
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Latime
4.5mm
Temperatura maxima de lucru
+150 °C
Lungime
10mm
Inaltime
8.1mm
Frecventa minima de auto-rezonanta
-55 °C


