Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Tip pachet
HVMDIP
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
3.37mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Philippines
Detalii produs
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Each (In a Tube of 100) (fara TVA)
100
P.O.A.
Each (In a Tube of 100) (fara TVA)
Informatii despre stoc temporar indisponibile
100
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Tip pachet
HVMDIP
Montare
Through Hole
Numar pini
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
3.37mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Philippines
Detalii produs


